Abstract: The ITO film was prepared using In( NO3)3•4.5H2O as the primary material and acetylacetone as the solvent, adding SnCl4•5H2O with the mol ratio In : Sn was 10:1, using quartz glasses as the substrates. Comparing with the existing techniques, the samples in this paper were annealed at 500℃ after each dip-coating, cycling for 5 times. The samples’ thickness, morphology structure and performance of conductive and transparent were tested by surface profile ceremony (SPC), atomic force spectrometry (AFM), X-ray diffraction (XRD), UV-Vis spectrophotometer and four-point-probe ceremony. The experimental results show that the ITO film prepared by this method have good conductivity and high transmittance in the range of visible light with a resistivity of 5.625×10-3Ω•cm and a transmittance of 90%-95%.